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IRF7324 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7324
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9870
- Description: IRF7324 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 2W |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 18m Ω @ 9A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2940pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 5V |
| Drain to Source Voltage (Vdss) | 20V |
| JEDEC-95 Code | MS-012AA |
| Drain Current-Max (Abs) (ID) | 9A |
| Drain-source On Resistance-Max | 0.018Ohm |
| Pulsed Drain Current-Max (IDM) | 71A |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Terminal Finish | NOT SPECIFIED |
| Additional Feature | HIGH RELIABILITY |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
IRF7324 Description
New trench HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management
applications.
IRF7324 Features
● Trench Technology
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Low Profile (<1.1mm)
● Available in Tape & Reel
● 2.5V Rated
IRF7324 Applications
battery and load management applications
