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IRF7317TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7317TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3934
- Description: IRF7317TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 29mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED, ULTRA LOW RESISTANCE |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 6.6A |
| Base Part Number | IRF7317PBF |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 29m Ω @ 6A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A 5.3A |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
| Rise Time | 40ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 49 ns |
| Turn-Off Delay Time | 42 ns |
| Continuous Drain Current (ID) | 6.6A |
| Threshold Voltage | 700mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Avalanche Energy Rating (Eas) | 100 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 700 mV |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
IRF7317TRPBF Description
The fifth generation HEXFET of the International Rectifier Company adopts advanced technology to achieve a very low switching quantity per unit area. This benefit. Combined with the fast switching speed and rugged device design of HExFET Power MOSFET, HExFET Power MOSFET provides designers with an extremely reliable device that can be used in a variety of applications.
SO-8 has been improved by customizing lead frames to enhance thermal and multi-chip capabilities, making it ideal for power applications. With these improvements, a variety of devices can be used in applications that significantly reduce circuit board space. The package is designed for vapor phase interior or wave soldering technology.
IRF7317TRPBF Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free
IRF7317TRPBF Applications
HExFET Power MOSFET provides designers with an extremely reliable device that can be used in a variety of applications.
