IRF7316QTRPBF

MOSFET 2P-CH 30V 4.9A 8SOIC


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF7316QTRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 6780
  • Description: MOSFET 2P-CH 30V 4.9A 8SOIC(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Packaging Cut Tape (CT)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 2W
Base Part Number IRF7316QPBF
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 13 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 58m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.9A
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) -4.9A
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status RoHS Compliant

In Stock

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