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IRF7314TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7314TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 6784
- Description: IRF7314TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 71 ns |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -700 mV |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 58mOhm |
| Additional Feature | AVALANCHE RATED |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -5.3A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRF7314PBF |
| Number of Elements | 2 |
| Row Spacing | 6.3 mm |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 15 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 58m Ω @ 2.9A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
| Rise Time | 40ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 49 ns |
| Turn-Off Delay Time | 41 ns |
| Continuous Drain Current (ID) | -5.3A |
| Threshold Voltage | -700mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Avalanche Energy Rating (Eas) | 150 mJ |
IRF7314TRPBF Description
The fifth generation HEXFET of the International Rectifier Company adopts advanced technology to achieve a very low on-resistance per silicon, this advantage. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with extremely efficient and reliable devices for use in a variety of applications.
SO-8 is improved by customizing lead frames to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications.With these improvements multiple devices, which can be used to greatly reduce the packaging required by gas phase infrared or wave soldering technology in circuit board space applications.
IRF7314TRPBF Features
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape &Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7314TRPBF Applications
it provides designers with extremely efficient and reliable devices for use in a variety of applications.
