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IRF7311TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7311TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9536
- Description: IRF7311TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | 6.6A |
| Base Part Number | IRF7311PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 8.1 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 29m Ω @ 6A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
| Rise Time | 17ns |
| Fall Time (Typ) | 31 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 6.6A |
| Threshold Voltage | 700mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Avalanche Energy Rating (Eas) | 100 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 77 ns |
| FET Feature | Logic Level Gate |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 29mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED, ULTRA LOW RESISTANCE |
| Voltage - Rated DC | 20V |
IRF7311TRPBF Description
International Rectifier's fifth generation HEXFET uses advanced technology to achieve the advantage of extremely low on-resistance per silicon area. Coupled with the well-known fast switching speed and rugged device design of HEXFET Power MOSFET, designers are provided with extremely efficient and reliable devices that can be used in a variety of applications.
The SO-8 has been modified through a custom lead frame to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications.With these improvements multiple devices that can be used to significantly reduce circuit board space. The package is designed for gas phase infrared or wave soldering technology.
IRF7311TRPBF Features
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET Surface Mount
Fully Avalanche Rated
Lead-Free
IRF7311TRPBF Applications
designers are provided with extremely efficient and reliable devices that can be used in a variety of applications.
