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IRF7309TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7309TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9096
- Description: IRF7309TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Row Spacing | 6.3 mm |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4A 3A |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 4A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 16A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Nominal Vgs | 1 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 4.05mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 50mOhm |
| Additional Feature | ULTRA LOW RESISTANCE |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.4W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 4A |
| Base Part Number | IRF7309PBF |
| Number of Elements | 2 |
IRF7309TRPBF Description
The fifth generation HEXFET of the International Rectifier Company uses advanced technology to achieve the lowest possible on-resistance area per silicon. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rough device design, provides designers with an extremely efficient device used in a variety of applications.SO-8 has been improved through a customized framework to enhance thermal and multi-chip capabilities, making it ideal for a variety of power applications. Through these improvements, a variety of devices can be used in applications that greatly reduce circuit board space. Package design for gas phase, infrared or wave soldering technology in typical printed circuit board installation applications, it is possible to consume more than 0.8W.
IRF7309TRPBF Features
Generation Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape&Reel
Dynamic dv/dt Rating
Fast Switching Lead-Free
IRF7309TRPBF Applications
This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rough device design, provides designers with an extremely efficient device used in a variety of applications.
