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IRF7306TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7306TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 603
- Description: IRF7306TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 100mOhm |
| Additional Feature | ULTRA LOW RESISTANCE |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | -3.6A |
| Base Part Number | IRF7306PBF |
| Number of Elements | 2 |
| Row Spacing | 6.3 mm |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 11 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 17ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 18 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | -3.6A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 14A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 80 ns |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -1 V |
| Height | 1.75mm |
| Length | 4.9784mm |
| Width | 4.05mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF7306TRPBF Description
The fifth generation HEXFET of the International Rectifier Company adopts advanced processing technology to achieve the lowest possible switch. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications.
The SO-8 has been modified through a custom lead frame to enhance its thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications. Multiple devices can be used in one application, greatly reducing the circuit board space. The package is designed for the vapor phase. Infrared wave soldering technology. In typical printed circuit board installation applications, it is possible to consume more than 0.8W.
IRF7306TRPBF Features
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape &Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7306TRPBF Applications
HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications.
