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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| HTS Code | 8541.29.00.95 |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 2W |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 2.2A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drain Current-Max (Abs) (ID) | 3.6A |
| Drain-source On Resistance-Max | 0.09Ohm |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | Non-RoHS Compliant |
The fifth generation HEXFET of International Rectifier Company uses advanced technology to achieve minimum on-resistance, combines the well-known fast switching speed and rugged device design of HEXFET power MOSFET, and provides designers with an extremely efficient device used in a variety of applications.
The SO-8 has been improved by customizing lead frames to enhance thermal properties and a variety of capabilities to handle a variety of power applications. With these improvements, multiple devices can be used in one application while reducing circuit board space. The package is designed for vapor phase infrared. Or wave soldering technology in typical printed circuit board placement applications, power consumption of more than 0.8W is possible.
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet Surface Mount
Available in Tape&Reel
Dynamic dv/dt Rating
Fast Switching
provides designers with an extremely efficient device used in a variety of applications.
Please send RFQ , we will respond immediately.