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IRF7303TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7303TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 5712
- Description: IRF7303TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 50mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | ULTRA LOW RESISTANCE |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4.9A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRF7303PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 6.8 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 21ns |
| Fall Time (Typ) | 7.7 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 4.9A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 71 ns |
| FET Feature | Standard |
| Nominal Vgs | 1 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF7303TRPBF Description
The Fifth Generation HEXFETs from International Rectifier use cutting-edge processing techniques to create incredibly low on-resistance per silicon area. With the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, the designer now has a highly effective and dependable device for use in a variety of applications. The new Micro8 package, with a footprint area that is half that of the conventional SO-8, delivers the smallest footprint of any SOIC design. The Micro8 is the ideal tool since in many applications printed circuit board space is at a premium. Thanks to its low profile, the Micro8 will easily fit into extremely small application contexts like portable devices and PCMCIA cards (1.1mm).
IRF7303TRPBF Features
? Technology of the Generation
? Extremely Low On Resistance
? Double-N-Channel MOSFET
? Very Tiny SOIC Package
? Low Profile (around 1.1mm)
? Sold on reel-to-reel tape
? Rapid Switching
? Lead-Free
IRF7303TRPBF Applications
Switching applications
