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IRF7301TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7301TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 2226
- Description: IRF7301TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 50mOhm |
| Additional Feature | ULTRA LOW RESISTANCE |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | 5.2A |
| Base Part Number | IRF7301PBF |
| Number of Elements | 2 |
| Row Spacing | 6.3 mm |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 9 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 2.6A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Rise Time | 42ns |
| Fall Time (Typ) | 51 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 5.2A |
| Threshold Voltage | 700mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 44 ns |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 700 mV |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IRF7301TRPBF Description
The fifth generation HEXFET of the International Rectifier Company adopts advanced technology to achieve the lowest possible on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device for use in a variety of applications.
SO-8 has been improved through a customized framework to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications. With these improvements, a variety of devices can be used in applications that significantly reduce circuit board space. The package is designed for gas phase, infrared or wave soldering technology. In a typical PCB installation application, it is possible to consume more than 0.8W.
IRF7301TRPBF Features
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape&Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7301TRPBF Applications
provides designers with an extremely efficient device for use in a variety of applications.
