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ContactIRF7104TRPBF
MOSFET 2P-CH 20V 2.3A 8-SOIC
- Manufacturer: Infineon Technologies
- NO: 376-IRF7104TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 8690
- Description: MOSFET 2P-CH 20V 2.3A 8-SOIC(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 250mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | ULTRA LOW RESISTANCE |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | -2.3A |
| Base Part Number | IRF7104PBF |
| Number of Elements | 2 |
| Row Spacing | 6.3 mm |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 12 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 250m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 16ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 30 ns |
| Turn-Off Delay Time | 42 ns |
| Continuous Drain Current (ID) | -2.3A |
| Threshold Voltage | -3V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Pulsed Drain Current-Max (IDM) | 10A |
| Dual Supply Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 100 ns |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -3 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
