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IRF7103PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7103PBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3369
- Description: IRF7103PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 130m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Drain to Source Voltage (Vdss) | 50V |
| JEDEC-95 Code | MS-012AA |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain-source On Resistance-Max | 0.13Ohm |
| Pulsed Drain Current-Max (IDM) | 10A |
| DS Breakdown Voltage-Min | 50V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 2W |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRF7103PBF |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 2W |
IRF7103PBF Description
The Infineon Technologies IRF7103PBF is a 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package.
IRF7103PBF Features
Advanced Process Technology
Ultra-Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7103PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
