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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V |
| Drain to Source Voltage (Vdss) | 50V |
| FET Feature | Standard |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Packaging | Tube |
| Published | 2000 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Power - Max | 2W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 25V |
The fourth generation HEXFET of International Rectifier Company adopts advanced technology to achieve the lowest possible on-resistance per silicon area. This advantage, coupled with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications.
The SO-8 is improved by customizing the lead frame to enhance its thermal characteristics and dual-chip capabilities, making it an ideal choice for a variety of power applications. With these improvements, a variety of devices can be used in applications that greatly reduce circuit board space. The package is designed for gas phase, infrared or wave welding technology. In PCB mount applications, it is possible to consume more than 0.80W.
Advanced Process Technology
Ultra Low On-Resistance
DualN-Channel MOSFET
Surface Mount
Available in Tape &Reel
Dynamic dv/dt Rating
Fast Switching
gas phase
infrared or wave welding technology
Please send RFQ , we will respond immediately.