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ContactIRF6802SDTRPBF
IRF6802SDTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF6802SDTRPBF
- Package: DirectFET™ Isometric SA
- Datasheet:
- Stock: 7945
- Description: IRF6802SDTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Rise Time | 50ns |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time (Typ) | 23 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 16A |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 57A |
| Drain to Source Breakdown Voltage | 25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric SA |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.7W |
| Power Dissipation | 1.7W |
| Turn On Delay Time | 9.7 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 4.2m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 35μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
IRF6802SDTRPBF Description
IRF6802SDTRPbF combines the latest HEXFET*Power MOSFET ILOON technology with advanced DirectFET PAO to achieve higher performance in a MicRO-8 package with a form factor of only 0.7 mm. The DirecFET package is compatible with the existing AVOUT geometry used in current applications. POB assembly equipment and Vanor phase. Infrared or convection welding technology, when following the AN-1035 application instructions about the manufacturing method and process. DirectFET components allow double-sided cooling to maximize heat transfer in the power system, increasing the previously best thermal resistance by 80%.
IRF6802SDTRPbF has low resistance and low carbon, as well as UTRA low package inductance, which can effectively reduce switching loss. The reduced OSS makes the product the idea of a highly efficient BONE converter, making it the latest generation of AI processors operating at higher frequencies. RF6802SDTRPbF has been optimized for synchronous buck control FET sockets running on 12-volt bus converters.
IRF6802SDTRPBF Features
RoHs Compliant Containing No Lead and Bromide
low profile(<0.7mm)
?¤Dual Sided Cooling Compatible
low Package inductance...
Optimized for High Frequency Switching
ideal for cpu core De-Dc converters.
Optimized for Control FET socket of Sync.Buck Converters
IRF6802SDTRPBF Applications
synchronous buck control FET sockets running on 12-volt bus converters.
