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MOSFET 2N-CH 30V 15A DIRECTFET
- Manufacturer: Infineon Technologies
- NO: 376-IRF6723M2DTRPBF
- Package: DirectFET™ Isometric MA
- Datasheet:
- Stock: 2885
- Description: MOSFET 2N-CH 30V 15A DIRECTFET(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | HEXFET® |
| JESD-609 Code | e1 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2.7W |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRF6723M2DPBF |
| JESD-30 Code | R-XBCC-N4 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.7W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.6m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Rise Time | 41ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 15A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 47A |
| Drain-source On Resistance-Max | 0.0066Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Avalanche Energy Rating (Eas) | 71 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 596μm |
| Length | 6.35mm |
| Width | 5.05mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
