Products
Manufacturer
RFQ
NEWS
ContactIRF6702M2DTR1PBF
MOSFET 2N-CH 30V 15A DIRECTFET
- Manufacturer: Infineon Technologies
- NO: 376-IRF6702M2DTR1PBF
- Package: DirectFET™ Isometric MA
- Datasheet:
- Stock: 4742
- Description: MOSFET 2N-CH 30V 15A DIRECTFET(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MA |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Reach Compliance Code | compliant |
| JESD-30 Code | R-XBCC-N4 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Power - Max | 2.7W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.6m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 15A |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain Current-Max (Abs) (ID) | 15A |
| Drain-source On Resistance-Max | 0.0066Ohm |
| Pulsed Drain Current-Max (IDM) | 130A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 71 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
