IRF640PBF

MOSFET (Metal Oxide) N-Channel Bulk 180mOhm @ 11A, 10V ±20V 1300pF @ 25V 70nC @ 10V 200V TO-220-3


  • Manufacturer: Vishay Siliconix
  • NO: 880-IRF640PBF
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 1249
  • Description: MOSFET (Metal Oxide) N-Channel Bulk 180mOhm @ 11A, 10V ±20V 1300pF @ 25V 70nC @ 10V 200V TO-220-3 (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 180mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 18A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 51ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 1.3nF
Drain to Source Resistance 180mOhm
Rds On Max 180 mΩ
Nominal Vgs 2 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF640PBF Overview


A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.This device has a continuous drain current (ID) of [18A], which is its maximum continuous current.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.This device has a drain-to-source resistance of 180mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF640PBF Features


a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 180mOhm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)

IRF640PBF Applications


There are a lot of Vishay Siliconix IRF640PBF applications of single MOSFETs transistors.

  • Industrial Power Supplies
  • Motor control
  • Lighting
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Power Management Functions
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Solar Inverter
  • Load switching
  • LCD/LED/ PDP TV Lighting

In Stock

Please send RFQ , we will respond immediately.