IRF6156

IRF6156 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF6156
  • Package: 6-FlipFet™
  • Datasheet: pdf
  • Stock: 6718
  • Description: IRF6156 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Current - Continuous Drain (Id) @ 25°C 6.5A
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 0.04Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2.5W
FET Feature Logic Level Gate
RoHS Status Non-RoHS Compliant
Mounting Type Surface Mount
Package / Case 6-FlipFet™
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PBGA-B6
Qualification Status Not Qualified
Number of Elements 2
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2.5W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V

IRF6156 Description


The Infineon Technologies IRF6156 is an N-Channel MOSFET that creates a current channel by utilising electrons.



IRF6156 Features


  • 2 N-Channel (Dual)

  • Product qualification according to JEDEC standard

  • Industry-standard surface-mount power package



IRF6156 Applications


  • High-power applications


In Stock

Please send RFQ , we will respond immediately.