IRF5851TR

IRF5851TR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF5851TR
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 6291
  • Description: IRF5851TR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Max Power Dissipation 960mW
Power Dissipation 960mW
Power - Max 960mW
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.7A 2.2A
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 2.2A
Input Capacitance 400pF
FET Feature Logic Level Gate
Rds On Max 90 mΩ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

IRF5851TR   Description

 

A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. This is in contrast to the other type of MOSFET, which are P-Channel MOSFETs.

 

IRF5851TR     Features


Ultra Low On-Resistance

Dual P-Channel MOSFET

Surface Mount

Available in Tape &Reel

Low Gate Charge

 

IRF5851TR        Applications


making it an ideal choice for a variety of power applications

 





In Stock

Please send RFQ , we will respond immediately.