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IRF5851
  • IRF5851

IRF5851

IRF5851 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF5851
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 6078
  • Description: IRF5851 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Packaging Tube
Published 2002
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 20V
Power - Max 960mW
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.7A 2.2A
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
FET Feature Logic Level Gate
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

IRF5851           Description


These N-channel and P-channel MOSFET from International Rectifier use advanced technology to achieve extremely low on-resistance per silicon area. This advantage provides designers with extremely efficient devices for use in battery and load management applications. This dual TSOP-6 package is ideal for applications where PCB space is tight and maximum functionality is required. Because each package has two chips, IRF5851 can provide the function of two SOT-23 packages in a smaller footprint. Its unique heat dissipation design and RDS (on) reduction improve the current handling capacity.


IRF5851         Features


Ultra Low On-Resistance

 Dual N and P Channel MOSFET

 Surface Mount

 Available in Tape & Reel

 Low Gate Charge

 

IRF5851         Applications

 battery applications

 load management applications.

 

  

 





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