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IRF5850
  • IRF5850

IRF5850

IRF5850 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF5850
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 5432
  • Description: IRF5850 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 960mW
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 135m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.2A
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
FET Feature Logic Level Gate
RoHS Status Non-RoHS Compliant

IRF5850             Description


These N-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique.


IRF5850               Features


 Ultra Low On-Resistance

 Dual N-Channel MOSFET

 Surface Mount

 Available in Tape & Reel

 Lead-Free


IRF5850             Applications


This benefit provides the designer with an extremely efficient device for use in battery and load management applications.



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