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ContactIRF5810
IRF5810 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF5810
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 3441
- Description: IRF5810 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tube |
| Published | 2003 |
| Series | HEXFET® |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Subcategory | Other Transistors |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G6 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 960mW |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 2.9A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| JEDEC-95 Code | MO-193AA |
| Drain Current-Max (Abs) (ID) | 2.9A |
| Drain-source On Resistance-Max | 0.09Ohm |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 0.96W |
| FET Feature | Logic Level Gate |
| RoHS Status | Non-RoHS Compliant |
IRF5810 Description
These P-channel HEXFET power MOSFET from International Rectifier use advanced technology to achieve extremely low yellow resistance per silicon area, which provides designers with an extremely efficient device for battery and load management applications.This dual TSOP-6 package is ideal for applications where PCB space is tight and maximum functionality is required. Because each package has two chips, RF5810 can provide the function of two SOT-23 packages in a smaller footprint. Its unique heat dissipation design and RDS (on) reduction improve the current handling capacity.
IRF5810 Features
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Available in Tape &Reel
Low Gate Charge
IRF5810 Applications
provides designers with an extremely efficient device for battery and load management applications
