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ContactIRC730PBF
MOSFET (Metal Oxide) N-Channel Tube 1 Ω @ 3.3A, 10V ±20V 700pF @ 25V 38nC @ 10V TO-220-5
- Manufacturer: Vishay Siliconix
- NO: 880-IRC730PBF
- Package: TO-220-5
- Datasheet:
- Stock: 16457
- Description: MOSFET (Metal Oxide) N-Channel Tube 1 Ω @ 3.3A, 10V ±20V 700pF @ 25V 38nC @ 10V TO-220-5 (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | MATTE TIN |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 5 |
| JESD-30 Code | R-PSFM-T5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Number of Channels | 1 |
| Power Dissipation-Max | 74W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1 Ω @ 3.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 5.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 1Ohm |
| Drain to Source Breakdown Voltage | 400V |
| Pulsed Drain Current-Max (IDM) | 22A |
| FET Feature | Current Sensing |
| Height | 9.02mm |
| Length | 10.67mm |
| Width | 4.83mm |
| RoHS Status | ROHS3 Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-5 |
| Weight | 3.000003g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | HEXFET® |
| Published | 1997 |
| JESD-609 Code | e3 |
