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Through Hole Tube Active EAR99 Gate Drivers ICs Non-Inverting 500V V 14-DIP (0.300, 7.62mm) IR2110PBF Half-Bridge
- Manufacturer: Infineon Technologies
- NO: 376-IR2110PBF
- Package: 14-DIP (0.300, 7.62mm)
- Datasheet:
- Stock: 9145
- Description: Through Hole Tube Active EAR99 Gate Drivers ICs Non-Inverting 500V V 14-DIP (0.300, 7.62mm) IR2110PBF Half-Bridge (Kg)
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| Parameters | |
|---|---|
| Length | 20.1676mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
| Radiation Hardening | No |
| Number of Pins | 14 |
| Package / Case | 14-DIP (0.300, 7.62mm) |
| REACH SVHC | No SVHC |
| Height | 4.9276mm |
| Width | 7.11mm |
| Mounting Type | Through Hole |
| Weight | 1.620005g |
| Operating Temperature | -40°C~150°C TJ |
| Technology | CMOS |
| Operating Supply Current | 340μA |
| Max Supply Current | 340μA |
| Input Type | Non-Inverting |
| Number of Functions | 1 |
| Type | Integrated Circuit (IC) |
| JESD-609 Code | e3 |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 250 |
| Supply Voltage | 15V |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IR2110PBF |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 1.6W |
| Output Voltage | 20V |
| Number of Outputs | 2 |
| Output Current | 2.5A |
| Max Output Current | 2A |
| Power Dissipation | 1.6W |
| Propagation Delay | 150 ns |
| Turn On Delay Time | 10 ns |
| Max Output Voltage | 20V |
| Turn-Off Delay Time | 10 ns |
| Rise Time | 35ns |
| Fall Time (Typ) | 25 ns |
| Turn On Time | 0.15 μs |
| Channel Type | Independent |
| Voltage - Supply | 3.3V~20V |
| Min Output Voltage | 10V |
| Output Peak Current Limit-Nom | 2.5A |
| High Side Driver | YES |
| Rise / Fall Time (Typ) | 25ns 17ns |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| Logic Voltage - VIL, VIH | 6V 9.5V |
| High Side Voltage - Max (Bootstrap) | 500V |
| Factory Lead Time | 26 Weeks |
| Mount | Through Hole |
| Packaging | Tube |
| Published | 1996 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 14 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Operating Supply Voltage | 15V |
Product Description: IR2110PBF
The IR2110PBF is a high-voltage, high-speed power MOSFET and IGBT driver IC (Integrated Circuit) designed and manufactured by Infineon Technologies. This IC is widely used in various power switching applications where it provides efficient and reliable gate drive for high-power transistors.
Description:
The IR2110PBF is a half-bridge gate driver IC that incorporates independent high-side and low-side gate drivers. It is specifically designed to control high-voltage and high-current power transistors such as MOSFETs and IGBTs in power electronics circuits. The IC facilitates reliable switching and efficient power conversion in different applications.
Features:
High-Voltage Operation: The IR2110PBF is capable of handling high-voltage levels, making it suitable for applications with high voltage requirements.
High-Speed Switching: It is designed to provide fast switching speeds, enabling precise control and high-frequency operation.
Independent High-Side and Low-Side Drivers: The IC features independent gate drivers for the high-side and low-side transistors, allowing for better control and flexibility in various power configurations.
Floating Channel: The floating channel design of the IR2110PBF ensures that it can be used in high-side and low-side applications without any ground reference.
Bootstrap Operation: The IC utilizes a bootstrap capacitor to ensure efficient gate drive for high-side transistors.
Under-Voltage Lockout (UVLO) Protection: The IC incorporates under-voltage lockout protection to prevent improper operation at low voltages, ensuring safe and reliable operation.
Applications:
The IR2110PBF is widely used in various power electronics applications that require efficient and reliable gate driving for high-power transistors. Some common applications include:
Motor Drives: It is used in motor drive circuits for controlling the speed and direction of motors in industrial, automotive, and consumer applications.
Power Inverters: The IC is employed in power inverter circuits, including those used in solar inverters, UPS (Uninterruptible Power Supplies), and frequency converters.
Switched-Mode Power Supplies (SMPS): It is used in SMPS circuits for efficient power conversion and voltage regulation.
Induction Heating: The IC finds application in induction heating circuits for fast and precise heating in industrial processes.
Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) Systems: The IR2110PBF is used in electric vehicle and hybrid electric vehicle powertrain systems for efficient motor control.
Welding Machines: It is employed in welding machines for precise and efficient control of welding processes.
High-Power Audio Amplifiers: The IC is used in Class D audio amplifiers for high-power and high-efficiency audio amplification.
In summary, the IR2110PBF is a high-voltage and high-speed gate driver IC that provides efficient and reliable gate drive for high-power transistors such as MOSFETs and IGBTs. Its features, including high-speed switching, independent high-side and low-side drivers, floating channel, and UVLO protection, make it suitable for various power electronics applications, including motor drives, power inverters, SMPS, induction heating, electric vehicles, welding machines, and high-power audio amplifiers. With its robust design and reliable performance, the IR2110PBF contributes to the development of efficient and high-performance power electronics systems.
