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IPG20N10S4L22ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPG20N10S4L22ATMA1
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 5220
- Description: IPG20N10S4L22ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 60W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 2 |
| Power Dissipation | 60W |
| Turn On Delay Time | 5 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 25μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1755pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rise Time | 3ns |
| Fall Time (Typ) | 18 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 16V |
| Max Dual Supply Voltage | 100V |
| Drain to Source Breakdown Voltage | 100V |
| Max Junction Temperature (Tj) | 175°C |
| FET Feature | Logic Level Gate |
| Height | 1mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
IPG20N10S4L22ATMA1 Description
Modern HEXFET? Power MOSFET Silicon technology and cutting-edge DirectFETTM packaging are combined in the IPG20N10S4L22ATMA1. The DirectFET package is compatible with the layout geometries currently used in power applications, PCB assembly machinery, and vapor phase, infrared, or convection soldering techniques when application note AN-1035 outlining the manufacturing procedures and methods is followed. The two-sided cooling of the DirectFET package boosts heat transmission in power systems while reducing thermal resistance by 80% when compared to the previous-best.
IPG20N10S4L22ATMA1 Features
? Logic Level - Enhancement mode for dual N-channels
? AEC Q101 certification
? MSL1 peak reflow up to 260 ??C
? Operating temperature of 175 ??C
? Eco-Friendly Goods (RoHS compliant)
? Complete avalanche testing
IPG20N10S4L22ATMA1 Applications
Switching applications
