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ContactIPG20N06S415ATMA1
Trans MOSFET N-CH 60V 20A
- Manufacturer: Infineon Technologies
- NO: 376-IPG20N06S415ATMA1
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 6615
- Description: Trans MOSFET N-CH 60V 20A(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 50W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 12 ns |
| Power - Max | 50W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 15.5m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Rise Time | 2ns |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.0155Ohm |
| Avalanche Energy Rating (Eas) | 90 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
