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ContactIPG20N06S3L-35
IPG20N06S3L-35 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Utmel
- Manufacturer: Infineon Technologies
- NO: 376-IPG20N06S3L-35
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 17105
- Description: IPG20N06S3L-35 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Utmel(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | OptiMOS™ |
| Published | 2008 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Max Power Dissipation | 30W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | *PG20N06 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Power - Max | 30W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 15μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Continuous Drain Current (ID) | 20A |
| Drain-source On Resistance-Max | 0.035Ohm |
| DS Breakdown Voltage-Min | 55V |
| Avalanche Energy Rating (Eas) | 55 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
