IPG20N06S2L50AATMA1

MOSFET N-Ch 55V 20A TDSON-8


  • Manufacturer: Infineon Technologies
  • NO: 376-IPG20N06S2L50AATMA1
  • Package: 8-PowerVDFN
  • Datasheet: pdf
  • Stock: 8860
  • Description: MOSFET N-Ch 55V 20A TDSON-8(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package PG-TDSON-8-10
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 51W
Element Configuration Dual
Power - Max 51W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 50mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 19μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 55V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
Input Capacitance 560pF
FET Feature Logic Level Gate
Drain to Source Resistance 50mOhm
Rds On Max 50 mΩ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

In Stock

Please send RFQ , we will respond immediately.