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IPG16N10S461ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPG16N10S461ATMA1
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 7270
- Description: IPG16N10S461ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 29W |
| Terminal Form | FLAT |
| Reach Compliance Code | not_compliant |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 3 ns |
| Power - Max | 29W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 61m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 9μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Rise Time | 1ns |
| Turn-Off Delay Time | 5 ns |
| Continuous Drain Current (ID) | 16A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain-source On Resistance-Max | 0.061Ohm |
| Pulsed Drain Current-Max (IDM) | 64A |
| Avalanche Energy Rating (Eas) | 33 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Feedback Cap-Max (Crss) | 20 pF |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
IPG16N10S461ATMA1 Description
Thanks to innovative production techniques, the Fifth Generation HEXFETs from International Rectifier feature an extraordinarily low on-resistance per silicon area. Thanks to the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, the designer now has a highly reliable and durable device for use in a variety of applications. The footprint area of the new Micro8 package, which is half that of the conventional SO-8, is the smallest of any SOIC design. The Micro8 is the ideal tool because printed circuit board space is limited in many applications. Because of its compact profile, the Micro8 will easily fit into extremely small application environments like portable devices and PCMCIA cards (1.1mm).
IPG16N10S461ATMA1 Features
? Normal Level - Enhancement mode for dual N-channels
? AEC Q101 certification
? MSL1 peak reflow up to 260 ??C
? Operating temperature of 175 ??C
? Eco-Friendly Goods (RoHS compliant)
? Complete avalanche testing
IPG16N10S461ATMA1 Applications
Switching applications
