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ContactIPG15N06S3L-45
MOSFET 2N-CH 55V 15A TDSON-8
- Manufacturer: Infineon Technologies
- NO: 376-IPG15N06S3L-45
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 9818
- Description: MOSFET 2N-CH 55V 15A TDSON-8(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 21W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Power - Max | 21W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1420pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Continuous Drain Current (ID) | 15A |
| Drain Current-Max (Abs) (ID) | 17A |
| Drain-source On Resistance-Max | 0.045Ohm |
| Pulsed Drain Current-Max (IDM) | 60A |
| DS Breakdown Voltage-Min | 55V |
| Avalanche Energy Rating (Eas) | 47 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
