IKW50N60H3FKSA1

IKW50N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
NO: 376-IKW50N60H3FKSA1
Package: TO-247-3
Datasheet:
Stock: 2969
Description: IKW50N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2008
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	333W
Pin Count	3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	333W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	100A
Reverse Recovery Time	130 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	54 ns
Test Condition	400V, 50A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 50A
Turn Off Time-Nom (toff)	297 ns
IGBT Type	Trench Field Stop
Gate Charge	315nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	23ns/235ns
Switching Energy	2.36mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IKW50N60H3FKSA1 Description

The IKW50N60H3FKSA1 is a High-Speed IGBT in Trench and field-stop technology with a soft, fast recovery anti-parallel diode. The high-speed IKW50N60H3FKSA is used to reduce the size of the active components (25 to 70kHz). The Infineon IKW50N60H3FKSA1 provides the best compromise between switching and conduction losses. The key feature of this IGBT is a MOSFET-like turn-OFF switching behavior, leading to low turn-OFF losses.

IKW50N60H3FKSA1 Features

Low switching losses for high efficiency
Fast switching behaviour with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection is possible (down to 5R) whilst maintaining excellent switching behaviour
Short-circuit capability
Excellent performance
Low switching and conduction losses
Very good EMI behavior