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IKW40N65H5FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IKW40N65H5FKSA1
- Package: TO-247-3
- Datasheet:
- Stock: 3260
- Description: IKW40N65H5FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | TrenchStop® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 255W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Element Configuration | Single |
| Power Dissipation | 255W |
| Input Type | Standard |
| Collector Emitter Voltage (VCEO) | 1.65V |
| Max Collector Current | 74A |
| Reverse Recovery Time | 62 ns |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.65V |
| Test Condition | 400V, 20A, 15 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Gate Charge | 95nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 22ns/165ns |
| Switching Energy | 390μJ (on), 120μJ (off) |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The IKW40N65H5 is a High Speed IGBT in TRENCHSTOP? 5 technology co-packed with RAPID 1 fast and soft anti-parallel diode. The TRENCHSTOP? 5 IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market's high efficiency demands of tomorrow. It features best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability.
IKW40N65H5FKSA1 Features
● Best-in-Class efficiency in hard switching and resonant topologies
● Plug and play replacement of previous generation IGBTs
● 650V breakdown voltage
● Low gate charge QG
● IGBT copacked with RAPID 1 fast and soft antiparallel diode
● Maximum junction temperature 175°C
● Qualified according to JEDEC for target applications
● Pb-free lead plating
● RoHS compliant
IKW40N65H5FKSA1 Applications
● Solar converters
● Uninterruptible power supplies
● Welding converters
● Mid to high range switching frequency converters
● Alternative Energy
● Power Management
