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ContactIKP40N65F5XKSA1
IKP40N65F5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IKP40N65F5XKSA1
- Package: TO-220-3
- Datasheet:
- Stock: 3679
- Description: IKP40N65F5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | TrenchStop® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 255W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Element Configuration | Single |
| Power Dissipation | 255W |
| Input Type | Standard |
| Halogen Free | Halogen Free |
| Collector Emitter Voltage (VCEO) | 1.6V |
| Max Collector Current | 74A |
| Reverse Recovery Time | 60 ns |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
| Test Condition | 400V, 20A, 15 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Gate Charge | 95nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 19ns/160ns |
| Switching Energy | 360μJ (on), 100μJ (off) |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IKP40N65F5XKSA1 Description
When employing this Infineon Technologies IKP40N65F5XKSA1 IGBT transistor, don't be scared to increase the amps in your device. It features a collector-emitter voltage that can go as high as 650 V. It can dissipate up to 255000 mW of power. It is created in just one design. The operating temperature range for the IKP40N65F5XKSA1 IGBT transistor is -40 °C to 175 °C.
IKP40N65F5XKSA1 Features
Low Qg
650V breakdown voltage
Pb-free lead plating; RoHS compliant
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
IGBT co-packed with RAPID 1 fast and soft antiparallel diode
Best-in-Class efficiency in hard switching and resonant topologies
IKP40N65F5XKSA1 Applications
Industrial
Enterprise systems
Personal electronics
