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ContactIHW30N135R3FKSA1
IHW30N135R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IHW30N135R3FKSA1
- Package: TO-247-3
- Datasheet:
- Stock: 3312
- Description: IHW30N135R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 349W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Element Configuration | Single |
| Power Dissipation | 175W |
| Input Type | Standard |
| Power - Max | 349W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.35kV |
| Max Collector Current | 60A |
| Collector Emitter Breakdown Voltage | 1.35kV |
| Voltage - Collector Emitter Breakdown (Max) | 1350V |
| Collector Emitter Saturation Voltage | 1.85V |
| Test Condition | 600V, 30A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 30A |
| IGBT Type | Trench |
| Gate Charge | 263nC |
| Current - Collector Pulsed (Icm) | 90A |
| Td (on/off) @ 25°C | -/337ns |
| Switching Energy | 1.93mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.4V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | TrenchStop® |
IHW30N135R3FKSA1 Description
IHW30N135R3FKSA1, provided by Infineon Technologies, is a type of reverse-conducting IGBT with a monolithic body diode. Based on TRENCHSTOPTM technology, it is able to deliver high ruggedness, stable temperature behavior, very low VCEsat, and low Eoff, as well as easy parallel switching capability due to the positive temperature coefficient in VCEsat. Therefore, IHW30N135R3FKSA1 IGBT is well suited for a wide range of applications, including inverterized microwave ovens, resonant converters, and more.
IHW30N135R3FKSA1 Features
High ruggedness
Temperature stable behavior
Very low VCEsat and low Eoff
Easy parallel switching capability
Positive temperature coefficient in VCEsat
IHW30N135R3FKSA1 Applications
Inductive cooking
Inverterized microwave ovens
Resonant converters
Soft switching applications
