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HUFA76413DK8T datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-HUFA76413DK8T
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7783
- Description: HUFA76413DK8T datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | UltraFET™ |
| JESD-609 Code | e4 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 2.5W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4.8A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 49m Ω @ 5.1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Rise Time | 19ns |
| Fall Time (Typ) | 27 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 5.1A |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
HUFA76413DK8T Description
These N-channel power MOSFET are manufactured using innovative UltraFET processes. This advanced technology achieves the lowest possible on-resistance per silicon area, resulting in excellent performance. The device can withstand high energy in avalanche mode, the diode exhibits very low reverse recovery time, and STORE characteristics are designed for applications where power efficiency is important, such as switching regulators, switching converters, or motor drivers. Relay drivers, low-voltage bus switches and power management in portable and battery-powered products.
HUFA76413DK8T Applications
.Motor and Load Control Powertrain Management
HUFA76413DK8T Features
150°℃ Maximum Junction Temperature
UIS Capability(Single Pulse and Repetitive Pulse)
Ultra-Low On-ResistanceDS(ON)=0.049VGs=10V
·Ultra-Low On-ResistancerDs(ON)=0.056ΩVGs=5V
