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ContactHGTP20N60A4
HGTP20N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-HGTP20N60A4
- Package: TO-220-3
- Datasheet:
- Stock: 7277
- Description: HGTP20N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 44 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 290W |
| Current Rating | 70A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 290W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 15 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 12ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 73 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 70A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Turn On Time | 28 ns |
| Test Condition | 390V, 20A, 3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Continuous Collector Current | 70A |
| Turn Off Time-Nom (toff) | 160 ns |
| Gate Charge | 142nC |
| Current - Collector Pulsed (Icm) | 280A |
| Td (on/off) @ 25°C | 15ns/73ns |
| Switching Energy | 105μJ (on), 150μJ (off) |
| Height | 9.4mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
HGTP20N60A4 Description
The HGTG20N60A4 and HGTP20N60A4 are two variants of the same gene. The best features of a MOSFET with a high input impedance and the A bipolar transistor with a low on-state conduction loss. Many high-voltage switching applications benefit from IGBTs. high-frequency operation with low conduction losses is necessary. This device has been designed to be quick. UPS, welder, and induction applications are examples of switching applications. heating.
HGTP20N60A4 Features
Low Conduction Loss
40 A, 600 V @ TC = 110°C
Low Saturation Voltage : VCE(sat) = 1.8 V @ IC = 20 A
Typical Fall Time............55ns at TJ = 125°C
HGTP20N60A4 Applications
UPS
Welder
Other industries
Fash switching application
