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ContactHGTP12N60C3D
HGTP12N60C3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-HGTP12N60C3D
- Package: TO-220-3
- Datasheet:
- Stock: 2445
- Description: HGTP12N60C3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 104W |
| Current Rating | 24A |
| Base Part Number | HGTP12N60 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 104W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 28 μs |
| Transistor Application | MOTOR CONTROL |
| Turn-Off Delay Time | 270 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 24A |
| Reverse Recovery Time | 40 ns |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.65V |
| Turn On Time | 48 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A |
| Turn Off Time-Nom (toff) | 480 ns |
| Gate Charge | 48nC |
| Current - Collector Pulsed (Icm) | 96A |
| Switching Energy | 380μJ (on), 900μJ (off) |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
Description
The HGTP12N60C3D is a 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes. The greatest properties of MOSFETs and bipolar transistors are combined in this series of MOS gated high voltage switching devices. The device possesses a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25°C and 150°C, the significantly smaller on-state voltage loss fluctuates very modestly. The TA49123 development type IGBT was used. The TA49188 development type diode is utilized in anti-parallel with the IGBT.
The IGBT is suited for a wide range of high-voltage switching applications that operate at moderate frequencies and require minimal conduction losses.
Previously known as Developmental Type TA49182.
Features
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
24A, 600V at TC=25°C
Typical Fall Time at TJ=150°C...210ns
Applications
SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
UPS (Uninterruptible Power Supply) system.
AC and DC motor drive offering speed control.
Chopper and inverters.
Solar inverters.
