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HGTP12N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-HGTP12N60A4D
- Package: TO-220-3
- Datasheet:
- Stock: 3487
- Description: HGTP12N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 17 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 8ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 96 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 54A |
| Reverse Recovery Time | 18 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Turn On Time | 33 ns |
| Test Condition | 390V, 12A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
| Continuous Collector Current | 54A |
| Turn Off Time-Nom (toff) | 180 ns |
| Gate Charge | 78nC |
| Current - Collector Pulsed (Icm) | 96A |
| Td (on/off) @ 25°C | 17ns/96ns |
| Switching Energy | 55μJ (on), 50μJ (off) |
| Height | 9.4mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 167W |
| Current Rating | 54A |
| Base Part Number | HGTP12N60 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 167W |
HGTP12N60A4D Description
The HGTP12N60A4D is a 600V N-channel IGBT with an anti-parallel hyperfast diode and anti-parallel hyperfast diode. The MOS gate high voltage switching IGBT family includes this SMPS series. The advantages of MOSFET and bipolar transistors are combined in the IGBT. HGTP12N60A4D has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. For building high efficiency and reliable systems, it provides lower conduction and switching losses. On Semiconductor has a large selection of IGBT devices in several process technologies ranging from 300V to over 1200V. Higher control and repeatability of the top-side structure derive from an optimized production process, leading to tighter specifications and better EMI performance. According to the HGTP12N60A4D datasheet, it is intended for general use and can be used in a variety of situations.
HGTP12N60A4D Features
Low Conduction Loss
These are Pb?Free Devices
200 kHz Operation 390 V, 9A
600 V Switching SOA Capability
>100 kHz Operation 390 V, 12 A
Typical Fall Time 70 ns at TJ = 125°C
Temperature Compensating Saber? Model
Related Literature
TB334 “Guidelines for Soldering Surface Mount Components to
PC Boards”
HGTP12N60A4D Applications
UPS
Welder
Fast switching applications
High voltage switching applications
