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HGTG40N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-HGTG40N60B3
- Package: TO-247-3
- Datasheet:
- Stock: 223
- Description: HGTG40N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 290W |
| Current Rating | 70A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 290W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 47 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 170 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 70A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.4V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 82 ns |
| Test Condition | 480V, 40A, 3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Turn Off Time-Nom (toff) | 385 ns |
| Gate Charge | 250nC |
| Current - Collector Pulsed (Icm) | 330A |
| Td (on/off) @ 25°C | 47ns/170ns |
| Switching Energy | 1.05mJ (on), 800μJ (off) |
| Height | 20.82mm |
| Length | 15.87mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 44 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
HGTG40N60B3 Description
HGTG40N60B3 IGBT is a MOS-gated switcher that operates at high voltage that blends the most effective characteristics of MOSFETs with bipolar transistors. ON Semiconductor HGTG40N60B3 features the high impedance at the input of a MOSFET and the reduced on-state conduction loss that is typical of the bipolar transistor. HGTG40N60B3 circuit is ideal for various high voltage switching applications that operate at moderate frequencies, where the lowest conduction losses can be essential.
HGTG40N60B3 Features
600V Switching SOA Capability
Low Conduction Loss
70A, 600V, TC = 25°C
Short Circuit Rating
Typical Fall Time: 100ns at TJ = 150°C
HGTG40N60B3 Applications
Motion Control
Sewing machine
CNC
Motor control
Home appliances
