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| Parameters | |
|---|---|
| Factory Lead Time | 44 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS, AVALANCHE RATED |
| HTS Code | 8541.29.00.95 |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 500W |
| Current Rating | 72A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 24 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 240 ns |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 72A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.45V |
| Turn On Time | 42 ns |
| Test Condition | 960V, 27A, 3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 27A |
| Continuous Collector Current | 72A |
| Turn Off Time-Nom (toff) | 360 ns |
| IGBT Type | NPT |
| Gate Charge | 270nC |
| Current - Collector Pulsed (Icm) | 216A |
| Td (on/off) @ 25°C | 24ns/195ns |
| Switching Energy | 2.2mJ (on), 2.3mJ (off) |
| Height | 20.82mm |
| Length | 15.87mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The HGTG27N120BN is an IGBT with a NonPunch Through (NPT) design. The MOS gated high voltage switching IGBT family has a new member. IGBTs are a hybrid of MOSFETs and bipolar transistors that combine the best of both worlds. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss.
?TC = 25oC, 72A, 1200V
?SOA Switching Capability of 1200V
?At TJ = 150°C, a typical fall time is 140ns.
?Rat ing in a short circuit
?Low Loss Conductivity
?SPICE Model for Thermal Impedance
HGTG27N120BN is intended for general use and can be used in a variety of situations.
Please send RFQ , we will respond immediately.