HGTG27N120BN

HGTG27N120BN datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-HGTG27N120BN
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 4688
  • Description: HGTG27N120BN datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 44 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS, AVALANCHE RATED
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 500W
Current Rating 72A
Number of Elements 1
Element Configuration Single
Power Dissipation 500W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 24 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 240 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 72A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.45V
Turn On Time 42 ns
Test Condition 960V, 27A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 27A
Continuous Collector Current 72A
Turn Off Time-Nom (toff) 360 ns
IGBT Type NPT
Gate Charge 270nC
Current - Collector Pulsed (Icm) 216A
Td (on/off) @ 25°C 24ns/195ns
Switching Energy 2.2mJ (on), 2.3mJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGTG27N120BN Description


The HGTG27N120BN is an IGBT with a NonPunch Through (NPT) design. The MOS gated high voltage switching IGBT family has a new member. IGBTs are a hybrid of MOSFETs and bipolar transistors that combine the best of both worlds. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss.



HGTG27N120BN Features


?TC = 25oC, 72A, 1200V


?SOA Switching Capability of 1200V


?At TJ = 150°C, a typical fall time is 140ns.


?Rat ing in a short circuit


?Low Loss Conductivity


?SPICE Model for Thermal Impedance




HGTG27N120BN Applications


HGTG27N120BN is intended for general use and can be used in a variety of situations.


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