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ContactHGTG20N60B3D
HGTG20N60B3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-HGTG20N60B3D
- Package: TO-247-3
- Datasheet:
- Stock: 3036
- Description: HGTG20N60B3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 165W |
| Current Rating | 20A |
| Base Part Number | HGTG20N60 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 165W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 25 ns |
| Transistor Application | MOTOR CONTROL |
| Rise Time | 20ns |
| Turn-Off Delay Time | 220 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 40A |
| Reverse Recovery Time | 55ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 45 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 360 ns |
| Gate Charge | 80nC |
| Current - Collector Pulsed (Icm) | 160A |
| Switching Energy | 475μJ (on), 1.05mJ (off) |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
HGTG20N60B3D is a switching device that combines the top features of MOSFETs with bipolar transistors. These devices feature the large input impedance that comes from a MOSFET and the lower on-state conduction loss that is typical of the bipolar transistor. The significantly lower on-state voltage drop is moderately varying between 25 and 150degC.
HGTG20N60B3D Features
40A, 600V at TC = 25°C
Typical Fall Time: 140ns at 150°C
Short Circuit Rated
Low Conduction Loss
Hyperfast Anti-Parallel Diode
HGTG20N60B3D Applications
AC and DC motor controls
Power supplies
Drivers
Solenoids
Relays
Contactors
