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HGTG20N60A4D
  • HGTG20N60A4D

HGTG20N60A4D

HGTG20N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-HGTG20N60A4D
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 4846
  • Description: HGTG20N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 290W
Current Rating 70A
Base Part Number HGTG20N60
Number of Elements 1
Element Configuration Single
Power Dissipation 290W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 15 ns
Transistor Application POWER CONTROL
Rise Time 12ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 73 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Reverse Recovery Time 35 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Max Breakdown Voltage 600V
Turn On Time 28 ns
Test Condition 390V, 20A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A
Turn Off Time-Nom (toff) 160 ns
Gate Charge 142nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 15ns/73ns
Switching Energy 105μJ (on), 150μJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HGTG20N60A4D Description


HGTG20N60A4D, provided by ON Semiconductor, is a type of N-channel IGBT with an anti-parallel hyperfast diode combining the high input impedance of MOSFETs and the low on-state conduction loss of bipolar transistors. It is optimized for high-frequency switch-mode power supplies, low conduction loss, and lower on-state voltage drop, as a result, it is well suited for various high-voltage switching applications operating at high frequencies.



HGTG20N60A4D Features


  • Anti-parallel hyperfast diode

  • Low conduction loss

  • Lower on-state voltage drop

  • High input impedance

  • HGTG20N60A4D Applications

  • Available in the TO-247 package



HGTG20N60A4D Applications


  • High-voltage switching applications operating at high frequencies


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