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HGTG18N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-HGTG18N120BND
- Package: TO-247-3
- Datasheet:
- Stock: 7789
- Description: HGTG18N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 390W |
| Current Rating | 54A |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 390W |
| Input Type | Standard |
| Turn On Delay Time | 23 μs |
| Transistor Application | MOTOR CONTROL |
| Rise Time | 22ns |
| Turn-Off Delay Time | 170 μs |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 54A |
| Reverse Recovery Time | 75 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.45V |
| Turn On Time | 38 ns |
| Test Condition | 960V, 18A, 3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 18A |
| Turn Off Time-Nom (toff) | 345 ns |
| IGBT Type | NPT |
| Gate Charge | 165nC |
| Current - Collector Pulsed (Icm) | 160A |
| Td (on/off) @ 25°C | 23ns/170ns |
| Switching Energy | 1.9mJ (on), 1.8mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Fall Time-Max (tf) | 200ns |
| Height | 20.82mm |
| Length | 15.87mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
HGTG18N120BND Description
The HGTG18N120BND is an IGBT with a Non-Punch Through (NPT) design. The MOS gate high voltage switching IGBT family has a new member. IGBTs are a hybrid of MOSFETs and bipolar transistors that combine the best of both worlds. This device possesses a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT. HGTG18N120BND applications include UPS and other industries.
HGTG18N120BND Features
Short Circuit Rating
Low Conduction Loss
This Device is Pb?Free
26 A, 1200 V, TC = 110°C
Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C
HGTG18N120BND Applications
UPS
Other industries
