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HGTG11N120CND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-HGTG11N120CND
- Package: TO-247-3
- Datasheet:
- Stock: 327
- Description: HGTG11N120CND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Reverse Recovery Time | 70 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.1V |
| Turn On Time | 33 ns |
| Test Condition | 960V, 11A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 11A |
| Turn Off Time-Nom (toff) | 570 ns |
| IGBT Type | NPT |
| Gate Charge | 100nC |
| Current - Collector Pulsed (Icm) | 80A |
| Td (on/off) @ 25°C | 23ns/180ns |
| Switching Energy | 950μJ (on), 1.3mJ (off) |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2016 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 298W |
| Current Rating | 43A |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 298W |
| Input Type | Standard |
| Turn On Delay Time | 23 ns |
| Transistor Application | MOTOR CONTROL |
| Turn-Off Delay Time | 180 ns |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 43A |
HGTG11N120CND Description
The HGTG11N120CND is an NPT (Non-Punch Through) IGBT. The MOS gate high voltage switching IGBT family has a new member. IGBTs combine the greatest qualities of MOSFETs and bipolar transistors into a single device. This HGTG11N120CND has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. The IGBT used is the TA49291 development type. The development type TA49189 diode was employed. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT. Previously known as Developmental Type TA49303.
HGTG11N120CND Features
43 A, 1200 V, TC = 25°C
1200 V Switching SOA Capability
Typical Fall Time: 340 ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
Thermal Impedance SPICE Model
This is Pb?Free Device
HGTG11N120CND Applications
Power Management
Industrial
DC-DC Conversion
Switch application
