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ContactHGTD1N120BNS9A
HGTD1N120BNS9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-HGTD1N120BNS9A
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 5050
- Description: HGTD1N120BNS9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Additional Feature | LOW CONDUCTION LOSS, AVALANCHE RATED |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 60W |
| Terminal Form | GULL WING |
| Current Rating | 5.3A |
| Base Part Number | HGTD1N120 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Rise Time-Max | 14ns |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 15 ns |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 67 ns |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 5.3A |
| JEDEC-95 Code | TO-252AA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.5V |
| Max Breakdown Voltage | 1.2kV |
| Turn On Time | 24 ns |
| Test Condition | 960V, 1A, 82 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 1A |
| Turn Off Time-Nom (toff) | 333 ns |
| IGBT Type | NPT |
| Gate Charge | 14nC |
| Current - Collector Pulsed (Icm) | 6A |
| Td (on/off) @ 25°C | 15ns/67ns |
| Switching Energy | 70μJ (on), 90μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
HGTD1N120BNS9A Description
Non-Punch Through (NPT) IGBTs are used in the HGTD1N120BNS9A devices. They are members of the MOS gated high voltage switching IGBT family for the first time. IGBTs are a hybrid of MOSFETs and bipolar transistors that combine the best of both worlds. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss.
HGTD1N120BNS9A Features
? 1200V, 5.3A, TC = 25oC
? SOA Switching Capability of 1200V
?At Tj = 150°C, the typical E°ff is 120pJ.
?Rating for short circuits
?Low Loss of Conduction
?Avalanche-Resistant
?Thermal Impedance SPICE Model with Temperature Compensation SABERTM Model
HGTD1N120BNS9A Applications
Switching applications
