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ContactHGT1S20N60C3S9A
HGT1S20N60C3S9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-HGT1S20N60C3S9A
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 5447
- Description: HGT1S20N60C3S9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 44 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 1.31247g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 164W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Current Rating | 45A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 164W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 28 ns |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 151 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 45A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.4V |
| Turn On Time | 52 ns |
| Test Condition | 480V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 20A |
| Continuous Collector Current | 15A |
| Turn Off Time-Nom (toff) | 388 ns |
| Gate Charge | 91nC |
| Current - Collector Pulsed (Icm) | 300A |
| Td (on/off) @ 25°C | 28ns/151ns |
| Switching Energy | 295μJ (on), 500μJ (off) |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.65mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Description
The HGT1S20N60C3S9A is a 45A, 600V N-Channel IGBT. The greatest properties of MOSFETs and bipolar transistors are combined in this series of MOS gated high voltage switching devices. These devices have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25°C and 150°C, the significantly smaller on-state voltage loss fluctuates very modestly.
Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT.
Previously known as developmental type TA49178.
Features
Typical Fall Time...108ns at TJ=150°C
Short Circuit Rating
45A, 600V, TC=25°C
600V Switching SOA Capability
Low Conduction Loss
Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Applications
AC and DC motor drives offering speed control
Chopper and inverters
Solar inverters
SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers
UPS (Uninterruptible Power Supply) system
