FZTA14TA

FZTA14TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-FZTA14TA
  • Package: TO-261-4, TO-261AA
  • Datasheet: pdf
  • Stock: 370
  • Description: FZTA14TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 30V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FZTA14
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 1mA, 1A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 170MHz
Collector Emitter Saturation Voltage 1.6V
Max Breakdown Voltage 30V
Frequency - Transition 170MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
hFE Min 5000
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 1A
Height 1.8mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FZTA14TA Overview


DC current gain in this device equals 20000 @ 100mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 1mA, 1A.A constant collector voltage of 1A is necessary for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).The part has a transition frequency of 170MHz.A breakdown input voltage of 30V volts can be used.When collector current reaches its maximum, it can reach 1A volts.

FZTA14TA Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 1mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 170MHz

FZTA14TA Applications


There are a lot of Diodes Incorporated FZTA14TA applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

In Stock

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