FZT958TA

FZT958TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-FZT958TA
  • Package: TO-261-4, TO-261AA
  • Datasheet: pdf
  • Stock: 4839
  • Description: FZT958TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -400V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Frequency 85MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FZT958
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 85MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 240mV @ 300mA, 1A
Collector Emitter Breakdown Voltage 400V
Transition Frequency 85MHz
Collector Emitter Saturation Voltage -170mV
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) -6V
Continuous Collector Current -500mA
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg

FZT958TA Overview


In this device, the DC current gain is 100 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -170mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 240mV @ 300mA, 1A.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In this part, there is a transition frequency of 85MHz.An input voltage of 400V volts is the breakdown voltage.Collector current can be as low as 500mA volts at its maximum.

FZT958TA Features


the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 240mV @ 300mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 85MHz

FZT958TA Applications


There are a lot of Diodes Incorporated FZT958TA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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