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FZT957TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FZT957TA
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 1717
- Description: FZT957TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -300V |
| Max Power Dissipation | 3W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1A |
| Frequency | 85MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FZT957 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 85MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 300mA, 1A |
| Collector Emitter Breakdown Voltage | 300V |
| Transition Frequency | 85MHz |
| Collector Emitter Saturation Voltage | -170mV |
| Max Breakdown Voltage | 300V |
| Collector Base Voltage (VCBO) | 300V |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | -1A |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FZT957TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 10V.The collector emitter saturation voltage is -170mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Maintaining the continuous collector voltage at -1A is essential for high efficiency.The emitter base voltage can be kept at 6V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).Single BJT transistor contains a transSingle BJT transistorion frequency of 85MHz.As a result, it can handle voltages as low as 300V volts.Collector current can be as low as 1A volts at its maximum.
FZT957TA Features
the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 240mV @ 300mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is -1A
a transition frequency of 85MHz
FZT957TA Applications
There are a lot of Diodes Incorporated FZT957TA applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
