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FZT851TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-FZT851TA
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 4497
- Description: FZT851TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 3W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 6A |
| Frequency | 130MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | FZT851 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 130MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 6A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 1V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 375mV @ 300mA, 6A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | 375mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 100 |
| Continuous Collector Current | 6A |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FZT851TA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 375mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 375mV @ 300mA, 6A.Continuous collector voltages should be kept at 6A to achieve high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device has a current rating of 6A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 130MHz in the part.A breakdown input voltage of 60V volts can be used.A maximum collector current of 6A volts can be achieved.
FZT851TA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 375mV
the vce saturation(Max) is 375mV @ 300mA, 6A
the emitter base voltage is kept at 6V
the current rating of this device is 6A
a transition frequency of 130MHz
FZT851TA Applications
There are a lot of Diodes Incorporated FZT851TA applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
